onsemi BSS84 Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23 BSS84

RS-artikelnummer:: 671-0328
Tillv. art.nr:: BSS84
Tillverkare / varumärke:: onsemi

onsemi BSS84 Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23 BSS84

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

30,13 kr

(exkl. moms)

37,66 kr

(inkl. moms)

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Plus 320 enhet(er) är redo att levereras från en annan plats
Dessutom levereras 1 390 enhet(er) från den 01 januari 2026

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Enheter	Per enhet	Per förpackning*
10 - 90	3,013 kr	30,13 kr
100 - 240	2,598 kr	25,98 kr
250 - 490	2,24 kr	22,40 kr
500 - 990	1,971 kr	19,71 kr
1000 +	1,803 kr	18,03 kr

*vägledande pris

RS-artikelnummer:: 671-0328
Tillv. art.nr:: BSS84
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	130mA
	Maximum Drain Source Voltage Vds	50V
	Series	BSS84
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-65°C
	Typical Gate Charge Qg @ Vgs	0.9nC
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	250mW
	Maximum Operating Temperature	150°C
	Length	3mm
	Width	1.3 mm
	Standards/Approvals	No
	Height	1mm
	Automotive Standard	AEC-Q200, AEC-Q100, AEC-Q101

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 130mA
	Maximum Drain Source Voltage Vds 50V
	Series BSS84
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -65°C
	Typical Gate Charge Qg @ Vgs 0.9nC
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 250mW
	Maximum Operating Temperature 150°C
	Length 3mm
	Width 1.3 mm
	Standards/Approvals No
	Height 1mm
	Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.