onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002

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20 - 1802,52 kr50,40 kr
200 - 4802,173 kr43,46 kr
500 - 9801,882 kr37,64 kr
1000 - 19801,652 kr33,04 kr
2000 +1,507 kr30,14 kr

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Förpackningsalternativ:
RS-artikelnummer:
671-0312
Distrelec artikelnummer:
304-08-906
Tillv. art.nr:
2N7002
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

115mA

Maximum Drain Source Voltage Vds

60V

Series

2N7002

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

223nC

Maximum Power Dissipation Pd

200mW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

0.93mm

Width

1.3 mm

Standards/Approvals

No

Length

2.92mm

Automotive Standard

AEC-Q100, AEC-Q200, AEC-Q101

Distrelec Product Id

30408906

COO (Country of Origin):
CN

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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