Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G
- RS-artikelnummer:
- 644-261
- Tillv. art.nr:
- 2N7002-G
- Tillverkare / varumärke:
- Microchip
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
47,15 kr
(exkl. moms)
58,94 kr
(inkl. moms)
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- Dessutom levereras 2 560 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 4,715 kr | 47,15 kr |
| 100 - 490 | 4,155 kr | 41,55 kr |
| 500 - 990 | 3,718 kr | 37,18 kr |
| 1000 + | 3,069 kr | 30,69 kr |
*vägledande pris
- RS-artikelnummer:
- 644-261
- Tillv. art.nr:
- 2N7002-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 0.36W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1.12mm | |
| Width | 1.3 mm | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 0.36W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1.12mm | ||
Width 1.3 mm | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
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