Vishay SQJ740EP 2 Type N-Channel MOSFET, 123 A, 40 V Enhancement, 4-Pin SO-8L
- RS-artikelnummer:
- 280-0020
- Tillv. art.nr:
- SQJ740EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Antal (1 rulle med 3000 enheter)*
27 948,00 kr
(exkl. moms)
34 935,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 augusti 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 9,316 kr | 27 948,00 kr |
*vägledande pris
- RS-artikelnummer:
- 280-0020
- Tillv. art.nr:
- SQJ740EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8L | |
| Series | SQJ740EP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Forward Voltage Vf | 0V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | 100 percent Rg and UIS tested, RoHS, AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8L | ||
Series SQJ740EP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Forward Voltage Vf 0V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals 100 percent Rg and UIS tested, RoHS, AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Automotive MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
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