Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin
- RS-artikelnummer:
- 273-3032
- Tillv. art.nr:
- IRFS7734TRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
55,72 kr
(exkl. moms)
69,64 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 798 enhet(er) från den 26 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 27,86 kr | 55,72 kr |
| 10 - 48 | 25,255 kr | 50,51 kr |
| 50 - 98 | 21,335 kr | 42,67 kr |
| 100 - 248 | 19,88 kr | 39,76 kr |
| 250 + | 19,545 kr | 39,09 kr |
*vägledande pris
- RS-artikelnummer:
- 273-3032
- Tillv. art.nr:
- IRFS7734TRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 183A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 290W | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Lead-Free | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 183A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 290W | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Lead-Free | ||
The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.
Product qualification according to JEDEC standard
Softer body diode compared to previous silicon generation
Industry standard surface-mount power package
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