Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4
- RS-artikelnummer:
- 273-2628
- Tillv. art.nr:
- BSC076N04NDATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
99,46 kr
(exkl. moms)
124,325 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 90 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 19,892 kr | 99,46 kr |
| 50 - 495 | 18,10 kr | 90,50 kr |
| 500 - 995 | 14,202 kr | 71,01 kr |
| 1000 - 2495 | 13,932 kr | 69,66 kr |
| 2500 + | 13,596 kr | 67,98 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2628
- Tillv. art.nr:
- BSC076N04NDATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8-4 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8-4 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for drives applications and it is 100 percent avalanche tested. It is qualified for industrial applications according to the relevant tests of JEDEC47 20 2.
Halogen free
RoHS compliant
Pb free lead plating
Fast switching MOSFETs
Superior thermal resistance
relaterade länkar
- Infineon OptiMOS-T2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1
- Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IPG20N04S4L08AATMA1
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON IPG20N10S436AATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
