Vishay SiJA Type N-Channel MOSFET, 126 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- RS-artikelnummer:
- 268-8323
- Tillv. art.nr:
- SiJA54ADP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
121,18 kr
(exkl. moms)
151,475 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 6 050 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 24,236 kr | 121,18 kr |
| 50 - 95 | 21,818 kr | 109,09 kr |
| 100 - 245 | 17,562 kr | 87,81 kr |
| 250 - 995 | 17,226 kr | 86,13 kr |
| 1000 + | 11,916 kr | 59,58 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8323
- Tillv. art.nr:
- SiJA54ADP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SiJA | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0023Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.13mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SiJA | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0023Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It has flexible leads which provide resilience to mechanical stress. It is used an application as synchronous rectification, dc or ac inverters.
Optimizes switching characteristics
ROHS compliant
UIS tested 100 percent
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