Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- RS-artikelnummer:
- 268-8288
- Tillv. art.nr:
- SIHA150N60E-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
105,17 kr
(exkl. moms)
131,462 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 1 000 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 52,585 kr | 105,17 kr |
| 10 - 18 | 47,49 kr | 94,98 kr |
| 20 - 98 | 46,59 kr | 93,18 kr |
| 100 - 498 | 38,92 kr | 77,84 kr |
| 500 + | 32,985 kr | 65,97 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8288
- Tillv. art.nr:
- SIHA150N60E-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK SO-8DC | |
| Series | SIHA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK SO-8DC | ||
Series SIHA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay E series power MOSFET has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
relaterade länkar
- Vishay SIHA Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3
- Vishay SIDR Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC
