Microchip VN2406 Type N-Channel MOSFET, 1 A, 240 V MOSFET, 3-Pin TO-92 VN2406L-G
- RS-artikelnummer:
- 264-8945
- Tillv. art.nr:
- VN2406L-G
- Tillverkare / varumärke:
- Microchip
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
90,72 kr
(exkl. moms)
113,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 840 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 18,144 kr | 90,72 kr |
| 50 - 95 | 17,786 kr | 88,93 kr |
| 100 - 245 | 11,20 kr | 56,00 kr |
| 250 - 495 | 11,02 kr | 55,10 kr |
| 500 + | 10,752 kr | 53,76 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8945
- Tillv. art.nr:
- VN2406L-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 240V | |
| Series | VN2406 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 240V | ||
Series VN2406 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
relaterade länkar
- Microchip VN2406 Type N-Channel MOSFET 240 V MOSFET, 3-Pin TO-92
- Microchip Type N-Channel MOSFET 240 V Enhancement, 3-Pin TO-92 VN2410L-G
- Microchip Type N-Channel MOSFET 240 V Enhancement, 3-Pin TO-92
- Microchip Type N-Channel MOSFET 3-Pin TO-92 TP0606N3-G
- Microchip TN0110 N-Channel MOSFET 100 V, 3-Pin TO-92 TN0110N3-G
- Microchip VN3205 Type N-Channel MOSFET 3-Pin TO-92 VN3205N3-G
- Microchip VN0104 N-Channel MOSFET 40 V, 3-Pin TO-92 VN0104N3-G
- Microchip VN0104 Type N-Channel MOSFET 3-Pin TO-92 VN0104N3-G