Microchip TN0110 N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 TN0110N3-G

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RS-artikelnummer:
177-9742
Tillv. art.nr:
TN0110N3-G
Tillverkare / varumärke:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

100 V

Series

TN0110

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

5.08mm

Number of Elements per Chip

1

Width

4.06mm

Maximum Operating Temperature

+150 °C

Height

5.33mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold - 2.0V max.
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

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