Microchip VN0104 N-Channel MOSFET, 350 mA, 40 V, 3-Pin TO-92 VN0104N3-G

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RS-artikelnummer:
177-9704
Tillv. art.nr:
VN0104N3-G
Tillverkare / varumärke:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

40 V

Series

VN0104

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

5.08mm

Width

4.06mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

5.33mm

Forward Diode Voltage

1.8V

COO (Country of Origin):
TW
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

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