ROHM R6007END3 Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-252
- RS-artikelnummer:
- 264-3777
- Tillv. art.nr:
- R6007END3TL1
- Tillverkare / varumärke:
- ROHM
Antal (1 rulle med 2500 enheter)*
15 830,00 kr
(exkl. moms)
19 787,50 kr
(inkl. moms)
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 6,332 kr | 15 830,00 kr |
*vägledande pris
- RS-artikelnummer:
- 264-3777
- Tillv. art.nr:
- R6007END3TL1
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R6007END3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.62Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R6007END3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.62Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ROHM low-noise power MOSFET is suitable for switching power supply, it is low on-resistance, low radiation noise and Pb-free plating and RoHS compliant.
Fast switching
Parallel use is easy
relaterade länkar
- ROHM R6007END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6007END3TL1
- ROHM R6004END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6010YND3TL1
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6004RND3TL1
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6009KND3TL1
- ROHM R6004END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6004END3TL1
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6009RND3TL1
- ROHM R6013VND3 NaN Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
