Infineon HEXFET Type P-Channel MOSFET, -42 A, -55 V TO-263 AUIRF4905STRL
- RS-artikelnummer:
- 260-5059
- Tillv. art.nr:
- AUIRF4905STRL
- Tillverkare / varumärke:
- Infineon
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73,02 kr
(exkl. moms)
91,28 kr
(inkl. moms)
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- Dessutom levereras 375 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 73,02 kr |
| 10 - 24 | 69,33 kr |
| 25 - 49 | 67,98 kr |
| 50 - 99 | 63,62 kr |
| 100 + | 59,02 kr |
*vägledande pris
- RS-artikelnummer:
- 260-5059
- Tillv. art.nr:
- AUIRF4905STRL
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -42A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Power Dissipation Pd | 170W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 15.88mm | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -42A | ||
Maximum Drain Source Voltage Vds -55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Power Dissipation Pd 170W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 15.88mm | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon P Channel HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
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