Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V TO-252

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Antal (1 rulle med 2000 enheter)*

7 280,00 kr

(exkl. moms)

9 100,00 kr

(inkl. moms)

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Enheter
Per enhet
Per rulle*
2000 - 20003,64 kr7 280,00 kr
4000 - 40003,458 kr6 916,00 kr
6000 +3,239 kr6 478,00 kr

*vägledande pris

RS-artikelnummer:
258-3981
Tillv. art.nr:
IRFR220NTRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

600mΩ

Typical Gate Charge Qg @ Vgs

15nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

43W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

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