Infineon HEXFET Type N-Channel MOSFET, 17 A, 200 V TO-252

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Antal (1 rulle med 2000 enheter)*

9 096,00 kr

(exkl. moms)

11 370,00 kr

(inkl. moms)

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  • Dessutom levereras 4 000 enhet(er) från den 29 december 2025
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2000 +4,548 kr9 096,00 kr

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RS-artikelnummer:
258-3979
Tillv. art.nr:
IRFR15N20DTRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

165mΩ

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

140W

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Increased ruggedness

Multi-vendor compatibility

Industry standard qualification level

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