Infineon iPB Type N-Channel MOSFET, 260 A, 80 V P, 7-Pin TO-263 IPB015N08N5ATMA1
- RS-artikelnummer:
- 258-3784
- Tillv. art.nr:
- IPB015N08N5ATMA1
- Tillverkare / varumärke:
- Infineon
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73,60 kr
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92,00 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 73,60 kr |
| 10 - 24 | 70,00 kr |
| 25 - 49 | 68,54 kr |
| 50 - 99 | 64,18 kr |
| 100 + | 58,80 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3784
- Tillv. art.nr:
- IPB015N08N5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 260A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.86V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 260A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.86V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
relaterade länkar
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- Infineon iPB Type N-Channel MOSFET 80 V P TO-263 IPB019N08NF2SATMA1
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P407ATMA2