Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V TO-220 IRF8010PBF
- RS-artikelnummer:
- 257-9326
- Tillv. art.nr:
- IRF8010PBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
80,29 kr
(exkl. moms)
100,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 615 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 16,058 kr | 80,29 kr |
| 50 - 120 | 13,978 kr | 69,89 kr |
| 125 - 245 | 13,014 kr | 65,07 kr |
| 250 - 495 | 12,208 kr | 61,04 kr |
| 500 + | 11,244 kr | 56,22 kr |
*vägledande pris
- RS-artikelnummer:
- 257-9326
- Tillv. art.nr:
- IRF8010PBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 100V single n channel power mosfet in a TO 220 package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard through hole power package
High current rating
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