Infineon HEXFET Type N-Channel MOSFET, 0.9 A, 150 V, 6-Pin TSOP-6 IRF5802TRPBF
- RS-artikelnummer:
- 257-9290
- Tillv. art.nr:
- IRF5802TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
32,07 kr
(exkl. moms)
40,09 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 960 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 3,207 kr | 32,07 kr |
| 100 - 240 | 3,058 kr | 30,58 kr |
| 250 - 490 | 2,722 kr | 27,22 kr |
| 500 - 990 | 2,374 kr | 23,74 kr |
| 1000 + | 1,445 kr | 14,45 kr |
*vägledande pris
- RS-artikelnummer:
- 257-9290
- Tillv. art.nr:
- IRF5802TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TSOP-6 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TSOP-6 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 150 V, 6-Pin TSOP-6
- Infineon HEXFET Type N-Channel MOSFET -40 V, 6-Pin TSOP-6
- Infineon HEXFET Type N-Channel MOSFET 30 V TSOP-6
- Infineon HEXFET Type N-Channel MOSFET -40 V, 6-Pin TSOP-6 IRF5803TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V TSOP-6 IRLTS6342TRPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP IRFTS8342TRPBF
