Infineon HEXFET Type N-Channel MOSFET, 600 mA, 200 V Enhancement, 6-Pin TSOP

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4 401,00 kr

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5 502,00 kr

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RS-artikelnummer:
919-4725
Tillv. art.nr:
IRF5801TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

600mA

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.2Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

3.9nC

Maximum Operating Temperature

150°C

Length

3mm

Width

1.5 mm

Height

0.9mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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