Infineon HEXFET Type N-Channel MOSFET, 0.9 A, 150 V, 6-Pin TSOP-6

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Antal (1 rulle med 3000 enheter)*

2 871,00 kr

(exkl. moms)

3 588,00 kr

(inkl. moms)

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  • Dessutom levereras 3 000 enhet(er) från den 29 december 2025
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3000 +0,957 kr2 871,00 kr

*vägledande pris

RS-artikelnummer:
257-9289
Tillv. art.nr:
IRF5802TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.9A

Maximum Drain Source Voltage Vds

150V

Package Type

TSOP-6

Series

HEXFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

150mΩ

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

4.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

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