Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF
- RS-artikelnummer:
- 257-9274
- Distrelec artikelnummer:
- 304-40-515
- Tillv. art.nr:
- IRF1404STRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
44,35 kr
(exkl. moms)
55,438 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 728 enhet(er) från den 16 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 22,175 kr | 44,35 kr |
| 20 - 48 | 20,89 kr | 41,78 kr |
| 50 - 98 | 19,77 kr | 39,54 kr |
| 100 - 198 | 18,20 kr | 36,40 kr |
| 200 + | 16,855 kr | 33,71 kr |
*vägledande pris
- RS-artikelnummer:
- 257-9274
- Distrelec artikelnummer:
- 304-40-515
- Tillv. art.nr:
- IRF1404STRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin I2PAK IRF1404LPBF
- Infineon iPB Type N-Channel MOSFET 100 V P TO-263
- Infineon iPB Type N-Channel MOSFET 100 V P TO-263 IPB026N10NF2SATMA1
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 30 V TO-263
