Vishay Type N-Channel MOSFET, 2.1 A, 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1
- RS-artikelnummer:
- 256-7399
- Tillv. art.nr:
- SI8824EDB-T2-E1
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
91,40 kr
(exkl. moms)
114,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 5 475 enhet(er) från den 07 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 3,656 kr | 91,40 kr |
| 50 - 75 | 3,58 kr | 89,50 kr |
| 100 - 225 | 2,742 kr | 68,55 kr |
| 250 - 975 | 2,684 kr | 67,10 kr |
| 1000 + | 1,662 kr | 41,55 kr |
*vägledande pris
- RS-artikelnummer:
- 256-7399
- Tillv. art.nr:
- SI8824EDB-T2-E1
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MICRO FOOT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.024Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.9W | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.402mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MICRO FOOT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.024Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.9W | ||
Maximum Operating Temperature 175°C | ||
Height 0.402mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel mosfet have typical ESD protection and its applications are ultraportable and wearable devices, load switch with low voltage drop, power lines and small signal and high speed switching.
TrenchFET power mosfet
Ultra small 0.8 mm x 0.8 mm outline
Ultra thin 0.357 mm height
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