onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247
- RS-artikelnummer:
- 254-7669
- Tillv. art.nr:
- NTH4L025N065SC1
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rör med 450 enheter)*
63 041,85 kr
(exkl. moms)
78 802,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 04 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 450 - 450 | 140,093 kr | 63 041,85 kr |
| 900 - 900 | 137,291 kr | 61 780,95 kr |
| 1350 + | 134,546 kr | 60 545,70 kr |
*vägledande pris
- RS-artikelnummer:
- 254-7669
- Tillv. art.nr:
- NTH4L025N065SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 164nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS with exemption 7a, Pb-Free 2LI | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 164nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L
The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in telecommunication
Ultra low gate charge
High speed switching and low capacitance
relaterade länkar
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247 NTH4L025N065SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247 NTH4L075N065SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247 NTHL015N065SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTH4L060N065SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 NTHL025N065SC1