Vishay Type N-Channel MOSFET, 110 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW

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12 330,00 kr

(exkl. moms)

15 420,00 kr

(inkl. moms)

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3000 +4,11 kr12 330,00 kr

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RS-artikelnummer:
252-0319
Tillv. art.nr:
SQS142ELNW-T1_GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

192W

Typical Gate Charge Qg @ Vgs

94nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

3.3 mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile

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