Vishay SQS Type N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- RS-artikelnummer:
- 268-8370
- Tillv. art.nr:
- SQS140ELNW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
100,80 kr
(exkl. moms)
126,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 6 000 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 10,08 kr | 100,80 kr |
| 50 - 90 | 9,867 kr | 98,67 kr |
| 100 - 240 | 7,862 kr | 78,62 kr |
| 250 + | 7,717 kr | 77,17 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8370
- Tillv. art.nr:
- SQS140ELNW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQS | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0043Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 197W | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQS | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0043Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 197W | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature. It has wettable flank terminals.
Low thermal resistance
AEC Q101 qualified
ROHS compliant
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