Vishay Type N-Channel MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

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Antal (1 rulle med 2000 enheter)*

36 126,00 kr

(exkl. moms)

45 158,00 kr

(inkl. moms)

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  • Dessutom levereras 2 000 enhet(er) från den 29 december 2025
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2000 +18,063 kr36 126,00 kr

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RS-artikelnummer:
252-0267
Tillv. art.nr:
SIHK185N60E-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.05mΩ

Channel Mode

Depletion

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

132W

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

5.15 mm

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Kelvin connection for reduced gate noise

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