Vishay Type N-Channel MOSFET, 78 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR578EP-T1-RE3

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80,30 kr

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100,38 kr

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2 - 1840,15 kr80,30 kr
20 - 9837,69 kr75,38 kr
100 - 19834,16 kr68,32 kr
200 - 49832,145 kr64,29 kr
500 +30,185 kr60,37 kr

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Förpackningsalternativ:
RS-artikelnummer:
252-0258
Tillv. art.nr:
SIDR578EP-T1-RE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

78A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0042mΩ

Channel Mode

Depletion

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

175°C

Length

6.15mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested


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