Vishay Type N-Channel MOSFET, 90.9 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR570EP-T1-RE3
- RS-artikelnummer:
- 252-0256
- Tillv. art.nr:
- SIDR570EP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
83,44 kr
(exkl. moms)
104,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 6 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 41,72 kr | 83,44 kr |
| 20 - 98 | 39,255 kr | 78,51 kr |
| 100 - 198 | 35,39 kr | 70,78 kr |
| 200 - 498 | 33,49 kr | 66,98 kr |
| 500 + | 31,305 kr | 62,61 kr |
*vägledande pris
- RS-artikelnummer:
- 252-0256
- Tillv. art.nr:
- SIDR570EP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0042mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0042mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
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