Vishay Type N-Channel MOSFET, 148 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC

Se alla MOSFETs

Antal (1 rulle med 3000 enheter)*

43 224,00 kr

(exkl. moms)

54 030,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 6 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
3000 +14,408 kr43 224,00 kr

*vägledande pris

RS-artikelnummer:
252-0252
Tillv. art.nr:
SIDR510EP-T1-RE3
Tillverkare / varumärke:
Vishay
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

148A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0042mΩ

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46.1nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

6.15mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested


relaterade länkar