Infineon iPB Type N-Channel MOSFET, 273 A, 100 V Enhancement, 3-Pin TO-263

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27 740,00 kr

(exkl. moms)

34 680,00 kr

(inkl. moms)

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1000 +27,74 kr27 740,00 kr

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RS-artikelnummer:
250-0592
Tillv. art.nr:
IPB60R060C7ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. This series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on) A below 1Ohm*mm². It is suitable for hard and soft switching (PFC and high performance LLC). It has an increased MOSFET dv/dt ruggedness to 120V/ns and increased efficiency.

Enabling higher system efficiency by lower switching losses

Increased power density solutions due to smaller packages

Suitable for applications such as server, telecom and solar

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