Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110N20N3LFATMA1

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61,20 kr

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76,50 kr

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Förpackningsalternativ:
RS-artikelnummer:
242-5823
Tillv. art.nr:
IPB110N20N3LFATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon Linear FET MOSFET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Combination of low R DS(on) and wide safe operating area (SOA)

High max pulse current

High continuous pulse current

Maximum drain current is 88A

Operating Temperature range is from -55 °C to 150 °C

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