Infineon BSS Type P-Channel MOSFET, 0.15 A, 30 V Enhancement, 3-Pin SOT-23 BSS315PH6327XTSA1
- RS-artikelnummer:
- 250-0558
- Tillv. art.nr:
- BSS315PH6327XTSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
26,30 kr
(exkl. moms)
32,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 8 180 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 2,63 kr | 26,30 kr |
| 100 - 240 | 2,509 kr | 25,09 kr |
| 250 - 490 | 1,702 kr | 17,02 kr |
| 500 - 990 | 1,579 kr | 15,79 kr |
| 1000 + | 1,187 kr | 11,87 kr |
*vägledande pris
- RS-artikelnummer:
- 250-0558
- Tillv. art.nr:
- BSS315PH6327XTSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.15A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BSS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.15A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BSS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. The OptiMOS P 2 Small Signal-Transistor. The Logic level 4.5V rated, avalanche rated.
Logic level is 4.5V rated
100% lead-free, and Halogen-free
Maximum power dissipation is 500mW
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