Infineon BSS Type P-Channel MOSFET, 0.9 A, 100 V Depletion, 3-Pin SOT-23
- RS-artikelnummer:
- 250-0550
- Tillv. art.nr:
- BSS169H6327XTSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
3 468,00 kr
(exkl. moms)
4 335,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 6 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 3000 | 1,156 kr | 3 468,00 kr |
| 6000 - 6000 | 1,098 kr | 3 294,00 kr |
| 9000 + | 1,029 kr | 3 087,00 kr |
*vägledande pris
- RS-artikelnummer:
- 250-0550
- Tillv. art.nr:
- BSS169H6327XTSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes N-channel Depletion mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. It is a SIPMOS Small-Signal-Transistor, dv /dt rated and available with V GS(th) indicator on reel.
VDS is 100 V, Rds(on),max 12 W and IDSS,min is 0.09 A
Maximum power dissipation is 360mW
relaterade länkar
- Infineon BSS Type P-Channel MOSFET 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1
- Infineon BSS Type N-Channel MOSFET 250 V Depletion, 3-Pin SOT-23
- Infineon BSS Type N-Channel MOSFET 250 V Depletion, 3-Pin SOT-23 BSS139H6327XTSA1
- Infineon BSS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS315PH6327XTSA1
- Infineon BSS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1
- Infineon BSS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23