Infineon HEXFET Type P-Channel MOSFET, 230 A, 75 V Enhancement, 3-Pin TO-220

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

1 442,35 kr

(exkl. moms)

1 802,95 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Lagerinformation är för närvarande otillgänglig
Enheter
Per enhet
Per Rør*
50 - 5028,847 kr1 442,35 kr
100 - 20025,962 kr1 298,10 kr
250 +24,519 kr1 225,95 kr

*vägledande pris

RS-artikelnummer:
249-6869
Tillv. art.nr:
AUIRF6215
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

230A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-220

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.

Advance planner technology

LowOn-Resistance

Dynamic dV/dT Rating

175 C operating temperature

Fast switching

relaterade länkar