Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1
- RS-artikelnummer:
- 244-0944
- Tillv. art.nr:
- IPD65R225C7ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
47,87 kr
(exkl. moms)
59,838 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 464 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 23,935 kr | 47,87 kr |
| 10 - 18 | 22,735 kr | 45,47 kr |
| 20 - 48 | 20,55 kr | 41,10 kr |
| 50 - 98 | 18,37 kr | 36,74 kr |
| 100 + | 17,53 kr | 35,06 kr |
*vägledande pris
- RS-artikelnummer:
- 244-0944
- Tillv. art.nr:
- IPD65R225C7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon's CoolMOS C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
650V voltage
Revolutionary Best-in-Class RDS (on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and Solar Inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
relaterade länkar
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD30N12S3L31ATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1