Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1
- RS-artikelnummer:
- 244-8544
- Tillv. art.nr:
- IPD050N10N5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
49,19 kr
(exkl. moms)
61,488 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 566 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 24,595 kr | 49,19 kr |
| 20 - 48 | 20,65 kr | 41,30 kr |
| 50 - 98 | 19,125 kr | 38,25 kr |
| 100 - 198 | 17,965 kr | 35,93 kr |
| 200 + | 16,44 kr | 32,88 kr |
*vägledande pris
- RS-artikelnummer:
- 244-8544
- Tillv. art.nr:
- IPD050N10N5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET OptiMOSTM5 Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.
N-channel, normal level
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Ideal for high-frequency switching
relaterade länkar
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD65R660CFDAATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD60R145CFD7ATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD80R450P7ATMA1
- Infineon IPD Type N-Channel MOSFET, 75 A N TO-252
- Infineon IPD Type N-Channel MOSFET, 75 A N TO-252 IPD110N12N3GATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252