Infineon IAUT Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TO-263 IAUT300N08S5N014ATMA1
- RS-artikelnummer:
- 244-0893
- Tillv. art.nr:
- IAUT300N08S5N014ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
53,76 kr
(exkl. moms)
67,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 3 985 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 53,76 kr |
| 10 - 24 | 51,07 kr |
| 25 - 49 | 48,94 kr |
| 50 - 99 | 46,82 kr |
| 100 + | 43,46 kr |
*vägledande pris
- RS-artikelnummer:
- 244-0893
- Tillv. art.nr:
- IAUT300N08S5N014ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | IAUT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series IAUT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET IAUT300N08S5N014ATMA1 Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
relaterade länkar
- Infineon IAUT Type N-Channel MOSFET 40 V Enhancement, 8-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement TO-263 IPB120N04S402ATMA1
- Infineon IAUT Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- Infineon IAUT Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN IAUZ40N10S5N130ATMA1
- Infineon iPB Type N-Channel MOSFET 120 V Enhancement TO-263