Infineon HEXFET 2 Type P, Type N-Channel MOSFET, 4.7 A, -55 V, 8-Pin SOIC

Se alla MOSFETs

Antal (1 rulle med 4000 enheter)*

32 948,00 kr

(exkl. moms)

41 184,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 12 000 enhet(er), redo att levereras
Enheter
Per enhet
Per rulle*
4000 +8,237 kr32 948,00 kr

*vägledande pris

RS-artikelnummer:
243-9287
Tillv. art.nr:
AUIRF7343QTR
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

-55V

Series

HEXFET

Package Type

SOIC

Pin Count

8

Maximum Drain Source Resistance Rds

0.11mΩ

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Advanced Planar Technology

Ultra Low On-Resistance

Logic Level Gate Drive

Dual N and P Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free, RoHS Compliant

relaterade länkar