Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ039N06NSATMA1
- RS-artikelnummer:
- 241-9705
- Tillv. art.nr:
- BSZ039N06NSATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
25,54 kr
(exkl. moms)
31,92 kr
(inkl. moms)
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- 5 000 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 12,77 kr | 25,54 kr |
| 20 - 48 | 10,305 kr | 20,61 kr |
| 50 - 98 | 9,69 kr | 19,38 kr |
| 100 - 198 | 9,07 kr | 18,14 kr |
| 200 + | 8,455 kr | 16,91 kr |
*vägledande pris
- RS-artikelnummer:
- 241-9705
- Tillv. art.nr:
- BSZ039N06NSATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS Power Transistor is a N channel MOSFET which is fully qualified according to JEDEC for Industrial Applications. It has Higher solder joint reliability due to enlarged source interconnection.
Optimized for high performance SMPS
Superior thermal resistance
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