Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L

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RS-artikelnummer:
239-8670
Tillv. art.nr:
SQJ186EP-T1_GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

410A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8L

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.02Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

255W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

125°C

Standards/Approvals

No

Width

4.9 mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay SIDR is automotive N-Channel MOSFET which operates at 80 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

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