STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220 STP80N240K6
- RS-artikelnummer:
- 239-5544
- Tillv. art.nr:
- STP80N240K6
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
298,37 kr
(exkl. moms)
372,96 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 20 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 59,674 kr | 298,37 kr |
| 10 - 20 | 56,694 kr | 283,47 kr |
| 25 - 45 | 51,028 kr | 255,14 kr |
| 50 + | 50,714 kr | 253,57 kr |
*vägledande pris
- RS-artikelnummer:
- 239-5544
- Tillv. art.nr:
- STP80N240K6
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | STP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Length | 28.9mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series STP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Length 28.9mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
relaterade länkar
- STMicroelectronics STP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics STP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP65N045M9
- STMicroelectronics STP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP60N043DM9
- STMicroelectronics STP Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP80N340K6
- STMicroelectronics STP Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP80N900K6
- STMicroelectronics STP Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP80N600K6
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT018W65G3-4AG
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220