STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220

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2 042,90 kr

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2 553,60 kr

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50 - 5040,858 kr2 042,90 kr
100 - 20038,815 kr1 940,75 kr
250 +36,10 kr1 805,00 kr

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RS-artikelnummer:
239-5543
Tillv. art.nr:
STP80N240K6
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

140W

Maximum Operating Temperature

150°C

Standards/Approvals

UL

Height

4.6mm

Width

10.4 mm

Length

28.9mm

Automotive Standard

AEC-Q101

The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.

Worldwide best RDS(on) x area

Worldwide best FOM (figure of merit)

Ultra low gate charge

100% avalanche tested

Zener-protected

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