STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247
- RS-artikelnummer:
- 230-0093
- Tillv. art.nr:
- SCTWA60N120G2-4
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 rör med 30 enheter)*
8 566,77 kr
(exkl. moms)
10 708,47 kr
(inkl. moms)
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 + | 285,559 kr | 8 566,77 kr |
*vägledande pris
- RS-artikelnummer:
- 230-0093
- Tillv. art.nr:
- SCTWA60N120G2-4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTW | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 388W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 21.1mm | |
| Width | 5.1 mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTW | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 388W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 3V | ||
Maximum Operating Temperature 175°C | ||
Height 21.1mm | ||
Width 5.1 mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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