Infineon Typ P Kanal, MOSFET, 120 A 40 V Förbättring, 3 Ben, TO-220, IPP AEC

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RS-artikelnummer:
229-1847
Tillv. art.nr:
IPP120P04P4L03AKSA2
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Kanaltyp

Typ P

Produkttyp

MOSFET

Maximal kontinuerlig dräneringsström Id

120A

Maximal källspänning för dränering Vds

40V

Kapseltyp

TO-220

Serie

IPP

Fästetyp

Yta

Antal ben

3

Maximal drain-källresistans Rds

3.4mΩ

Kanalläge

Förbättring

Minsta arbetsstemperatur

-55°C

Framåtriktad spänning Vf

-1.3V

Maximal spänning för grindkälla Vgs

5 V

Maximal effektförlust Pd

136W

Typisk grindladdning Qg @ Vgs

180nC

Maximal arbetstemperatur

175°C

Bredd

15.95 mm

Längd

15.65mm

Höjd

2.54mm

Standarder/godkännanden

No

Fordonsstandard

AEC

Infineon Series IPP MOSFET, 120A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IPP120P04P4L03AKSA2


This silicon MOSFET is designed for high performance within various applications. The component features a TO-220 package that enhances its capability for effective thermal dissipation. With a maximum continuous drain current of 120A and a drain-source voltage of 40V, it offers excellent operational flexibility in demanding environments. The MOSFET operates efficiently across a wide temperature range, making it suitable for automotive and industrial applications.

Features & Benefits


• P-channel enhancement mode ensures efficient switching performance

• AEC qualified, meeting rigorous automotive standards

• Maximum operating temperature of +175°C allows for demanding requirement

• MSL1 rating supports high-temperature reflow processes

Applications


• Used in automotive control systems for efficient power management

• Effective for electric motor drive in robotics

• Incorporated into power supply circuits in industrial machinery

• Suitable for consumer electronics where compact size is essential

What is the significance of the maximum continuous drain current rating?


The maximum continuous drain current rating indicates the highest amount of current the device can handle under normal operating conditions, which is essential for ensuring reliability in applications demanding high current capacity.

How does the low Rds(on) contribute to power efficiency?


A low Rds(on) reduces power losses during operation, allowing devices to run cooler and enhancing overall system energy efficiency, which is particularly beneficial in battery-operated designs.

What safety features does this component offer for harsh environments?


This device is 100% avalanche tested, ensuring it can withstand transient conditions without failure, which is crucial for protecting circuits in unpredictable environments such as automotive and industrial applications.

What performance characteristics should one consider when integrating this component into existing systems?


Key characteristics like gate threshold voltage, maximum gate-source voltage, and thermal resistance should be evaluated to ensure compatibility with existing circuit designs and to optimise performance.

How does the operating temperature range enhance its usability in different applications?


With an operating temperature range from -55°C to +175°C, this MOSFET is versatile enough for use across a broad spectrum of applications, from extreme cold environments to high-temperature operational settings.

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