Vishay TrenchFET Type N-Channel MOSFET, 150 A, 200 V Enhancement, 3-Pin TO-263 SUM90100E-GE3
- RS-artikelnummer:
- 228-2987
- Tillv. art.nr:
- SUM90100E-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
98,34 kr
(exkl. moms)
122,92 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 618 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 49,17 kr | 98,34 kr |
| 20 - 48 | 44,24 kr | 88,48 kr |
| 50 - 98 | 41,775 kr | 83,55 kr |
| 100 - 198 | 39,255 kr | 78,51 kr |
| 200 + | 36,40 kr | 72,80 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2987
- Tillv. art.nr:
- SUM90100E-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 72.8nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 72.8nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 200-V (D-S) MOSFET.
100 % Rg and UIS tested
relaterade länkar
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 SUM70030M-GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 SUM40014M-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-263 SUM60061EL-GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 SUP90100E-GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-263