Vishay TrenchFET Type P-Channel MOSFET, 90 A, 40 V Enhancement, 4-Pin SO-8 SQJ147ELP-T1_GE3
- RS-artikelnummer:
- 228-2955
- Tillv. art.nr:
- SQJ147ELP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
82,66 kr
(exkl. moms)
103,32 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 480 enhet(er) från den 12 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 8,266 kr | 82,66 kr |
| 100 - 240 | 7,851 kr | 78,51 kr |
| 250 - 490 | 6,194 kr | 61,94 kr |
| 500 - 990 | 5,79 kr | 57,90 kr |
| 1000 + | 4,547 kr | 45,47 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2955
- Tillv. art.nr:
- SQJ147ELP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Power Dissipation Pd | 183W | |
| Forward Voltage Vf | -0.76V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Power Dissipation Pd 183W | ||
Forward Voltage Vf -0.76V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive P-channel is 40 V power MOSFET.
100 % Rg and UIS tested
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