Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8
- RS-artikelnummer:
- 228-2911
- Tillv. art.nr:
- SiR876BDP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Antal (1 rulle med 3000 enheter)*
16 860,00 kr
(exkl. moms)
21 060,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 21 000 enhet(er), redo att levereras
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 5,62 kr | 16 860,00 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2911
- Tillv. art.nr:
- SiR876BDP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42.7nC | |
| Maximum Power Dissipation Pd | 71.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42.7nC | ||
Maximum Power Dissipation Pd 71.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 100 V MOSFET.
100 % Rg and UIS tested
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