Vishay N-Channel 60 V Type N-Channel MOSFET, 293 A, 60 V, 4-Pin PowerPAK (8x8L) SQJ174EP-T1_GE3
- RS-artikelnummer:
- 225-9953
- Tillv. art.nr:
- SQJ174EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
182,78 kr
(exkl. moms)
228,48 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 29 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 18,278 kr | 182,78 kr |
| 100 - 240 | 16,453 kr | 164,53 kr |
| 250 - 490 | 15,534 kr | 155,34 kr |
| 500 - 990 | 11,883 kr | 118,83 kr |
| 1000 + | 10,237 kr | 102,37 kr |
*vägledande pris
- RS-artikelnummer:
- 225-9953
- Tillv. art.nr:
- SQJ174EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 293A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | N-Channel 60 V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 4.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 293A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series N-Channel 60 V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Standards/Approvals AEC-Q101 | ||
Width 4.9 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
relaterade länkar
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L) SQJA16EP-T1_GE3
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L) SQJQ160E-T1_GE3
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V Single, 4-Pin PowerPAK (8x8L) SQJ164ELP-T1_GE3
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V Single, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 40 V Type N-Channel MOSFET 40 V, 4-Pin PowerPAK (8x8L) SQJ138ELP-T1_GE3