Vishay N-Channel 60 V Type N-Channel MOSFET, 75 A, 60 V Single, 4-Pin PowerPAK (8x8L) SQJ164ELP-T1_GE3
- RS-artikelnummer:
- 225-9950
- Tillv. art.nr:
- SQJ164ELP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
113,01 kr
(exkl. moms)
141,26 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 11,301 kr | 113,01 kr |
| 100 - 240 | 10,741 kr | 107,41 kr |
| 250 - 490 | 9,027 kr | 90,27 kr |
| 500 - 990 | 8,478 kr | 84,78 kr |
| 1000 + | 7,907 kr | 79,07 kr |
*vägledande pris
- RS-artikelnummer:
- 225-9950
- Tillv. art.nr:
- SQJ164ELP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | N-Channel 60 V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Single | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.15mm | |
| Length | 90mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 4.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series N-Channel 60 V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Single | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Operating Temperature 175°C | ||
Height 6.15mm | ||
Length 90mm | ||
Standards/Approvals AEC-Q101 | ||
Width 4.9 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
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