Vishay P-Channel 60-V Type P-Channel MOSFET, 11.5 A, 60 V, 8-Pin PowerPAK 1212 SQ7415CENW-T1_GE3
- RS-artikelnummer:
- 225-9934
- Tillv. art.nr:
- SQ7415CENW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
237,45 kr
(exkl. moms)
296,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 11 650 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 9,498 kr | 237,45 kr |
| 125 - 225 | 8,548 kr | 213,70 kr |
| 250 - 600 | 8,068 kr | 201,70 kr |
| 625 - 1225 | 7,123 kr | 178,08 kr |
| 1250 + | 5,698 kr | 142,45 kr |
*vägledande pris
- RS-artikelnummer:
- 225-9934
- Tillv. art.nr:
- SQ7415CENW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | P-Channel 60-V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 136mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 53W | |
| Forward Voltage Vf | -0.85V | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series P-Channel 60-V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 136mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 53W | ||
Forward Voltage Vf -0.85V | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Maximum Operating Temperature 175°C | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
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